Continuous patterned layer deposition

摘要

A method of manufacturing a substrate with a patterned layer of deposited material, the patterned layer being deposited from a processing head, the method comprising
applying bearing gas from the processing head to keep the processing head hovering over the substrate on a gas bearing;moving the substrate and the hovering processing head relative to each other;applying a primer material for selective deposition of a deposition material to the substrate, the primer material being applied from a first area of a surface of the processing head that faces the substrate, and spatially patterning the primer on the substrate after or during application;applying the deposition material to the substrate from a second area of the surface of the processing head that faces the substrate, the second area lying downstream of the first area in a direction of the movement of the substrate relative to the processing head.

主权项

1. A device for manufacturing a substrate with a patterned layer of deposited material, the device comprising
a processing head having a gas bearing surface; a transport mechanism configured for providing relative movement between a substrate and the processing head, by causing a position on the substrate to be exposed successively to a first, a second, and a third area of the processing head; wherein the first area includes a first area recess or a first area set of openings coupled to a primer material supply input for applying primer material to the substrate; wherein the second area includes a pattern writer; wherein the third area includes a third area recess or third area set of openings coupled to a deposition material supply input for applying deposition material to the substrate; wherein the pattern writer is configured to spatially pattern the primer material on the substrate, after the primer material is applied to the substrate when exposed to the first area, and before the deposition material is applied to the substrate, when successively exposed to the third area.