PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PE-CVD) APPARATUS AND METHOD OF OPERATING THE SAME

摘要

A deposition apparatus includes a chuck in a process chamber, the chuck having a top surface on which a substrate is loaded, a showerhead disposed over the chuck, and a fence extension disposed in the process chamber. Plasma is generated in a space between the showerhead and the loaded substrate during a deposition process. The fence extension at least partially confines the plasma in the space during the deposition process, thereby enabling improved thickness uniformity and reliability of a layer deposited on the loaded substrate during the deposition process.

主权项

1. A plasma-enhanced chemical vapor deposition (PE-CVD) apparatus comprising:
a process chamber including a wall portion and a bottom plate that define an inner space in which a deposition process is performed; a chuck in the process chamber, the chuck movable in a vertical direction, and the chuck including a top surface configured to support a substrate loaded during the deposition process; a showerhead disposed over the chuck; an insulating body surrounding a sidewall of the showerhead; a fence extension extending downward from the insulating body, the fence extension disposed in the process chamber; and a high-frequency power source, coupled to the showerhead, configured to generate plasma between the showerhead and the loaded substrate supported on the top surface of the chuck during the deposition process, wherein the fence extension is at least partially disposed between the wall portion and the plasma during the deposition process.