Magnetic cell and magnetic memory

摘要

It is possible to provide a magnetic cell having a high developing rate of MR characteristics and a reduced fluctuation without causing element falling-down and a magnetic memory having the same. A magnetic cell includes: a lower electrode; an electrically conductive pillar formed on the lower electrode; a magnetoresistance effect film having at least two ferromagnetic layers formed on the electrically conductive pillar and an intermediate layer provided between the ferromagnetic layers; an upper electrode formed on the magnetoresistance effect film; a support layer formed from at least one metal directly on a side face of the electrically conductive pillar or via an insulating layer; and a current diffusion preventing layer provided between the support layer and the lower electrode, wherein a height of the electrically conductive pillar, a thickness of the current diffusion preventing layer, and a thickness of the support layer satisfy relationships of $h>\mathrm{t1}+\mathrm{t2}>\frac{30}{30+L}xh$ where h represents the height of the electrically conductive pillar, t 1 represents the thickness of the current diffusion preventing layer, t 2 represents the thickness of the support layer, and L (nm) represents a length of a short side of the electrically conductive pillar.