| 摘要 |
PROBLEM TO BE SOLVED: To obtain a trench capacitor structure in which mutual influence can be reduced between the regions whose crystallization levels are different. SOLUTION: In a trench capacitor 40, a substrate 60 is provided with a trench 44, an embedded plate electrode 42, a node dielectric 46, an oxide collars 48, trench electrode materials 50, and a conductive type strap 56. A quantum conductive layer which is a silicon nitride thin film is arranged on a boundary face 58 between the conductive strap 56 and the substrate 60 and a boundary face 62 between the trench electrode 50 and the conductive strap 56. The transmission of the recrystallizing force of the trench electrode 50 and the strap 56 to the strap 56 or the substrate 60 can be reduced by this quantum conductive layer. Thus, the reliability of the device can be improved.
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