发明名称 |
Cleaning solution for semiconductor surfaces following chemical-mechanical polishing |
摘要 |
A composition and method are provided for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been chemically-mechanically polished. The cleaning composition comprises a carboxylic acid, an amine-containing compound, a phosphonic acid, and water. The cleaning composition is useful in removing abrasive remnants as well as metal contaminants from the surface of a semiconductor wafer following chemical-mechanical polishing.
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申请公布号 |
US6395693(B1) |
申请公布日期 |
2002.05.28 |
申请号 |
US19990405249 |
申请日期 |
1999.09.27 |
申请人 |
CABOT MICROELECTRONICS CORPORATION |
发明人 |
WANG SHUMIN |
分类号 |
H01L21/304;C11D1/46;C11D7/32;C11D7/36;C11D11/00;H01L21/02;H01L21/306;H01L21/321;(IPC1-7):C11D3/30 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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