发明名称 System and method for ESD protection on high voltage I/O circuits triggered by a diode string
摘要 An eletrostatic discharge (ESD) protection circuit and method for operating same are disclosed. The protection circuit for each pad of integrated circuits include a diode string connected to a first pad at its anode end having a total forward voltage drop more than, or equal to, a first supply voltage and with its cathode end passing the ESD charge, a current dissipation module with at least one N-type MOSFET for passing the ESD charge from diode string to a first common node connectable to a second supply voltage, a first diode with its anode end connected to first common node and its cathode node connected to the first pad, and a control module for controlling the current dissipation module for dissipating the ESD charge through the first common node when it causes a voltage on the first pad to surpass the total forward voltage drop of the diode string.
申请公布号 US7061737(B2) 申请公布日期 2006.06.13
申请号 US20040818052 申请日期 2004.04.05
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHEN CHUNG-HUI
分类号 H02H3/20;H01L23/60;H01L27/02;H02H9/04;H05F3/00 主分类号 H02H3/20
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