发明名称 |
Semiconductor laser element and manufacturing method for the same |
摘要 |
A semiconductor laser element comprising: a clad layer of a first conductivity type; an active layer; a first clad layer of a second conductivity type; a ridge made of a second clad layer of the second conductivity type and a cap layer of the second conductivity type, which are layered on the first clad layer of the second conductivity type, in this order starting from the first clad layer side; a dielectric film formed on ridge sides other than a top portion of the ridge; and a metal electrode layer that covers the ridge, wherein the width of the bottom of the cap layer and the width of the top surface of the second clad layer are approximately equal.
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申请公布号 |
US7065116(B2) |
申请公布日期 |
2006.06.20 |
申请号 |
US20040995780 |
申请日期 |
2004.11.22 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OHTA MASAYUKI;HASHIMOTO TAKAHIRO;OHITSU YOSHINORI;TSUJII HIROYUKI;KINEI SATOFUMI;OSHIMA NOBORU;KANEIWA SHINJI |
分类号 |
H01S5/00;H01S5/042;H01S5/22;H01S5/223 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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