| 摘要 |
PURPOSE:To enhance stress resistance for resin mold and to enhance the irradiation efficiency of ultraviolet rays by forming the resin film comprising silicone ladder-based resin having hydrogen atoms at the end and a methyl group at the side chain on a semiconductor substrate. CONSTITUTION:The stress buffer film provided in a semiconductor substrate, wherein elements are formed, is made of silicone-ladder-based resin, wherein an end group R expressed in the formula is an alkyl group, a side chain R' is a cyclohexane group or a low alkyl group and (n) is 10 or more. The end group R is a hydrogen atom in place of the alkyl group. Photopolymerization- type unsaturated group of 3mol% or more is provided at the side chain. Thus, the stress buffer film can be formed thickly, and ultraviolet rays having the short wavelengths can be transmitted. Therefore, stress resistance can be enhanced higher for resin mold, and the irradiation efficiency of the ultraviolet rays can be enhanced. |
