| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can extend operation lifetime of an insulated isolation trench in the high voltage side. SOLUTION: The semiconductor device is formed by providing, on a semiconductor substrate including an embedded oxide film 30, a low voltage circuit region 200 in which a plurality of low voltage elements 201 are formed and a high voltage circuit region 300 in which a plurality of high voltage elements 301 are formed. Moreover, the semiconductor device further includes an insulated isolation trench 61 formed to reach an embedded oxide film 30 surrounding the high voltage circuit region 300, an insulated isolation trench 62 formed to reach the embedded oxide film 30 within the region surrounded by the insulated isolation trench 61, a high voltage side element forming region e2 in which each high voltage element 301 surrounded by the insulated isolation trench 62 is formed, and a high voltage side field region f2 in which no element is formed between the insulated isolation trench 61 and the insulated isolation trench 62. In the semiconductor device, a potential of the high voltage side element forming region e2 is set almost equal to the potential of the high voltage side field region f2. COPYRIGHT: (C)2008,JPO&INPIT
|
