| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device of high conversion efficiency, with which peeling of an interface between an insulating layer and a crystal semiconductor particle is suppressed and light that reaches the lower side of the crystal semiconductor particle can be captured efficiently into the crystal semiconductor particle. <P>SOLUTION: In the photoelectric conversion device, a plurality of first conduction-type spherical crystal semiconductor particles 2, in which second conduction-type semiconductor parts 3 are formed on surface layers are coupled onto a conductive substrate 1. An insulating layer 4 is formed on the conductive substrate 1 between the crystal semiconductor particles 2. A translucent conductor layer 5 is formed on the semiconductor part 3 and the insulating layer 4. In the crystal semiconductor particle 2, a level difference 2a, where a diameter of the crystal semiconductor particle 2 changes stepwise is formed for a whole periphery near the upper side of a bonding part 2b of a surface and the conductive substrate 1, and a radius in a cross section of the lower side from the level difference 2a becomes small. The insulating layer 4 covers a part from a boundary 2c with the bonding part 2b on the surface of the crystal semiconductor particle 2 to the upper side of the level difference 2a. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
