发明名称 Light-emitting element, light-emitting device, display device, and electronic apparatus
摘要 Disclosed herein is a light-emitting element, including: a cathode; an anode; and a light-emitting unit, in which the light-emitting unit includes a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer, which are laminated from the anode side to the cathode side, in which each of the first, second, and third light-emitting layers is configured to contain a luminescent material, a host material, and an assist dopant material, and in which, when the contents of the assist dopant materials contained in the first, second, and third light-emitting layers are respectively expressed by CAssist(EML1), CAssist(EML2) and CAssist(EML3), the following Relational Expression (A) is satisfied: CAssist(EML1)≧CAssist(EML2)>CAssist(EML3)≧0  (A).
申请公布号 US9401492(B2) 申请公布日期 2016.07.26
申请号 US201514643439 申请日期 2015.03.10
申请人 SEIKO EPSON CORPORATION 发明人 Yamamoto Hidetoshi;Fukase Akio
分类号 H01L51/50;H01L51/00 主分类号 H01L51/50
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A light-emitting element, comprising: a cathode; an anode; and a light-emitting unit provided between the cathode and the anode to emit light when a driving voltage is applied, wherein the light-emitting unit includes a first light-emitting layer emitting first light, a second light-emitting layer emitting second light having a different color from the first light, and a third light-emitting layer emitting third light having the same color as the second light, which are laminated from the anode side to the cathode side, wherein each of the first, second, and third light-emitting layers is configured to contain a luminescent material, a host material supporting the luminescent material, and an assist dopant material, wherein the host material is a material having high electron transportability, and the assist dopant material is a material having high hole transportability, wherein, when the contents of the assist dopant materials contained in the first, second, and third light-emitting layers are respectively expressed by CAssist(EML1), CAssist(EML2), and CAssist(EML3), the following Relational Expression (A) is satisfied: CAssist(EML1)≧CAssist(EML2)>CAssist(EML3)≧0  (A); and wherein, in each of the first, second, and third light-emitting layers, when mobility of holes is expressed by μh and mobility of electrons is expressed by μe, in the first light-emitting layer and the second light-emitting layer, the following Relational Expression (1) is satisfied: 0.01≦μe/μh≦100  (1).
地址 Tokyo JP