Semiconductor device having barrier metal layer

摘要

According to one embodiment, a semiconductor device having an interlayer insulating film, a molybdenum containing layer, a barrier metal layer and a plug material layer is provided. The interlayer insulating film is formed on a substrate or on a conductive layer formed on a substrate. The interlayer insulating film has a hole reaching the substrate or the conductive layer. The molybdenum containing layer is formed in the substrate or in the conductive layer at a bottom portion of the hole. The barrier metal layer is formed on the molybdenum containing layer and on a side surface of the hole. A portion of the barrier metal layer is formed on the side surface contains at least molybdenum. A portion of the barrier metal layer is formed on the molybdenum containing layer includes at least a molybdenum silicate nitride film. The plug material layer is formed via the barrier metal layer.

主权项

1. A semiconductor device comprising:
an interlayer insulating film which is formed on a substrate or on a conductive layer containing silicon formed on a substrate, the interlayer insulating film having a hole reaching the substrate or the conductive layer; a molybdenum containing layer formed on the substrate or in the conductive layer at a bottom portion of the hole; a barrier metal layer formed on the molybdenum containing layer and on a side surface of the hole, a portion of the barrier metal layer formed on the side surface containing at least molybdenum, a portion of the barrier metal layer formed on the molybdenum containing layer including at least a molybdenum silicate nitride film; and a plug material layer formed in the hole through the barrier metal layer.