Metal-oxide field effect transistor having an oxide region within a lightly doped drain region

摘要

A semiconductor device and a method for manufacturing the same are provided. A semiconductor device includes a semiconductor substrate and a gate structure formed on the semiconductor substrate. A source region and a drain region are disposed on opposite sides of the gate structure on the semiconductor substrate. A lightly-doped drain region is adjacent to a side of the drain region close to the gate structure, and a lightly-doped source region is adjacent to a side of the source region close to the gate structure. An oxidation region is disposed in the lightly-doped drain region. A trench extends from the surface of the semiconductor substrate to the drain region. A source electrode is disposed on the source region, and the drain electrode has a first portion disposed on the drain region and a second portion disposed in the trench.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a gate structure disposed on the semiconductor substrate; a source region and a drain region disposed on opposite sides of the gate structure on the semiconductor substrate; a lightly doped drain region adjacent to a side of the drain region adjacent to the gate structure; a lightly doped source region adjacent to a side of the source region adjacent to the gate structure; an oxide region disposed in the lightly doped drain region; a trench extending from a surface of the semiconductor substrate into the drain region; a source electrode disposed on the source region; and a drain electrode having a first portion disposed on the drain region and a second portion disposed in the trench, wherein a bottom surface of the second portion of the drain electrode is lower than a bottom surface of the lightly doped drain region.