| 发明名称 |
Pre-pattern surface modification for low-k dielectrics |
| 摘要 |
A low-k dielectric layer (104) is treated with a dry-wet (D-W) or dry-wet-dry (D-W-D) process to improve patterning Resist poisoning occurs due to an interaction between low-k films (104), such as OSG, and DUV resist (130). The D-W or D-W-D treatment is performed to either pretreat a low-k dielectric (104) before forming the pattern (130) or during a rework of the pattern (130).
|
| 申请公布号 |
US2002111037(A1) |
申请公布日期 |
2002.08.15 |
| 申请号 |
US20010982654 |
申请日期 |
2001.10.18 |
| 申请人 |
KIRKPATRICK BRIAN K.;MORRISON MICHAEL;MCKERROW ANDREW J.;NEWTON KENNETH J.;ANDERSON DIRK N. |
发明人 |
KIRKPATRICK BRIAN K.;MORRISON MICHAEL;MCKERROW ANDREW J.;NEWTON KENNETH J.;ANDERSON DIRK N. |
| 分类号 |
H01L21/288;H01L21/311;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/288 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
