发明名称 |
Semiconductor integrated circuit device and process for manufacturing the same |
摘要 |
In a process for manufacturing a semiconductor integrated circuit device having a MISFET, in order that a shallow junction between the source/drain of the MISFET and a semiconductor substrate may be realized by reducing the number of heat treatment steps, all conductive films to be deposited on the semiconductor substrate are deposited at a temperature of 500° C. or lower at a step after the MISFET has been formed. Moreover, all insulating films to be deposited over the semiconductor substrate are deposited at a temperature of 500° C. or lower at a step after the MISFET has been formed. |
申请公布号 |
US2005042822(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
US20040950595 |
申请日期 |
2004.09.28 |
申请人 |
YOSHIDA MAKOTO;KUMAUCHI TAKAHIRO;TADAKI YOSHITAKA;KAJIGAYA KAZUHIKO;AOKI HIDEO;ASANO ISAMU |
发明人 |
YOSHIDA MAKOTO;KUMAUCHI TAKAHIRO;TADAKI YOSHITAKA;KAJIGAYA KAZUHIKO;AOKI HIDEO;ASANO ISAMU |
分类号 |
H01L21/265;H01L21/3205;H01L21/324;H01L21/336;H01L21/60;H01L21/768;H01L21/8238;H01L21/8239;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/824;H01L21/823 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|