发明名称 |
SEMICONDUCTOR MEMORY DEVICE CAPABLE OF DETECTING BRIDGE DEFECTS AND BRIDGE DEFECT DETECTING METHOD PERFORMED IN THE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A bridge defect detecting method performed in a semiconductor memory device that comprises a plurality of memory cells arranged at intersections between a plurality of word lines and a plurality of bit lines and a plurality of sense amplifiers connected to the bit lines, includes the operations of: enabling a first sense amplifier and a second sense amplifier; keeping the first sense amplifier in an enabled state and disabling the second sense amplifier; enabling the second sense amplifier, and detecting a bridge defect between the first memory cell and the second memory cell by reading data from a first memory cell of a first bit line connected to the first sense amplifier and a second memory cell of a second bit line connected to the second sense amplifier.
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申请公布号 |
US2008031062(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
US20070775513 |
申请日期 |
2007.07.10 |
申请人 |
AHN SOON-HONG;KIM CHI-WOOK |
发明人 |
AHN SOON-HONG;KIM CHI-WOOK |
分类号 |
G11C7/00;G11C7/02 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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