Bulk acoustic wave resonator having doped piezoelectric layer

摘要

In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element. For a particular acoustic coupling coefficient (kt2) value and a series resonance frequency (Fs) of the BAW resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer.

主权项

1. A bulk acoustic wave (BAW) resonator comprising:
a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element, wherein for a particular acoustic coupling coefficient (kt2) value and series resonance frequency (Fs) of the BAW resonator, the first electrode thickness and the second electrode thickness are respectively greater than a thickness of a first electrode and a thickness of a second electrode of a comparable BAW resonator comprising identical layers and materials except for comprising an undoped piezoelectric layer of the same piezoelectric material.