发明名称 ALUMINUM NITRIDE-BASED SUBSTRATE
摘要 PURPOSE:To improve electrical characteristics by blending AlN with a rare earth element and an alkaline earth metal in a specified weight ratio and rendering a prescribed volume resistivity at room temp. and a prescribed dielectric constant at 1MHz. CONSTITUTION:AlN powder of <=2mum mean particle size contg. <=1.5wt.% O2, <=0.2wt.% C, <=0.1wt.% cations other than Al ions and <=100ppm Si+Fe is blended with the compds. of a rare earth element and an alkaline earth metal as sintering aids. The amts. of the compds. added are within the region defined by points A, B, C, D, E, A or the region defined by points F, G, H, I, F in the coordinates with the amt. of the rare earth element (expressed in terms of oxide) as the x-axis and the amt. of the alkaline earth metal (expressed in terms of oxide) as the y-axis. They are mixed, molded into a prescribed shape and fired at >=1,500 deg.C in a nonoxidizing atmosphere contg. gaseous If. to obtain an AlN-based substrate having >=1X10<11>OMEGA-cm volume resistivity at room temp. and <=10 dielectric constant at 1MHz.
申请公布号 JPH04275981(A) 申请公布日期 1992.10.01
申请号 JP19910057834 申请日期 1991.02.27
申请人 KYOCERA CORP 发明人 MIYAHARA KENICHIRO;TOKUDA SHUJI
分类号 C04B35/581;C04B35/58;H01L23/15;H05K1/03 主分类号 C04B35/581
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