| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize a Pb-free, low-resistance thick-film resistor structure exhibiting superior temperature characteristics (TCR). <P>SOLUTION: The thick-film resistor structure is produced by dispersing a conductive material into an insulating material. Crystal of an oxide compound containing calcium and silicon is deposited in the thick-film resistor structure. Crystal of the oxide compound is acicular crystal. In order to deposit the crystal, temperature rise rate is controlled during calcination, when the thick film resistor structure is produced by calcinating thick-film resistor paste. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
