READING CIRCUIT FOR RESISTIVE MEMORY

摘要

The invention relates to a circuit for reading a programmed resistive state of resistive elements (102) of a resistive memory (101), wherein each resistive element may be programmed to be in a first or a second resistive state (Rmax, Rmin), wherein the circuit comprises a current integrator (122) suitable for integrating a difference in current between a reading current (IR) flowing through a first of the resistive elements and a reference current (IREF).