| 发明名称 |
Collector in an Extreme Ultraviolet Lithography System with Optimal Air Curtain Protection |
| 摘要 |
The present disclosure provides an extreme ultraviolet (EUV) lithography system. The EUV lithography system includes a collector having a coating surface designed to collect and reflect EUV radiation; a gas supply module; and a gas pipeline integrated with the collector and connected to the gas supply module. The gas pipeline includes inward and outward entrances into the collector. The inward and outward entrances are configured and operable to form a gas curtain on the coating surface of the collector. |
| 申请公布号 |
US2016306282(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615194118 |
申请日期 |
2016.06.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Chia-Ching;Chen Tsung-Yu;Hsu Chia-Hao;Yu Shinn-Sheng;Chen Chia-Chen |
| 分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An extreme ultraviolet (EUV) lithography system, comprising:
a collector having a coating surface designed to collect and reflect EUV radiation; a gas supply module; and a gas pipeline integrated with the collector and connected to the gas supply module, wherein the gas pipeline includes inward and outward entrances into the collector, wherein the inward and outward entrances are configured and operable to form a gas curtain on the coating surface of the collector. |
| 地址 |
Hsin-Chu TW |
