| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which number of manufacturing processes can be reduced for forming UBM films having a plane size smaller than that of a bump electrode and reducing concentration of stress on the peripheral border of the UBM films. <P>SOLUTION: The method for manufacturing the semiconductor device 1 is provided with a process for forming a first UBM film 7A which is not wettable with respect to the bump electrode 8 on an external terminal 5, and further forming a second UBM film 7B which is wettable with respect to the bump electrode 8; a process for forming the bump electrode 8 on the second UBM film 7B; a process for patterning the second UBM film 7B by using the bump electrode 8 as a mask and performing side etching; a process for filling only the part subjected to side etching with resist; and a process for patterning the first UBM film 7A by using the bump electrode 8 and the resist as masks. <P>COPYRIGHT: (C)2008,JPO&INPIT |
