| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a first fin pattern, which includes a first lower pattern and a first upper pattern stacked sequentially on a substrate, the first upper pattern including a first part and second parts respectively disposed on both sides of the first part, a gate electrode, which is formed on the first part to intersect the first fin pattern, and source/drain regions, which are formed on the second parts, respectively. A dopant concentration of the first upper pattern is higher than a dopant concentration of the first lower pattern and a dopant concentration of the substrate, and the dopant concentration of the first lower pattern is different from the dopant concentration of the substrate. |
| 申请公布号 |
US2016233144(A1) |
申请公布日期 |
2016.08.11 |
| 申请号 |
US201514961259 |
申请日期 |
2015.12.07 |
| 申请人 |
Pae Sang-Woo;Jeon Jong-Wook;Choo Seung-Jin;Sagong Hyun-Chul;Choi Jae-Hee |
发明人 |
Pae Sang-Woo;Jeon Jong-Wook;Choo Seung-Jin;Sagong Hyun-Chul;Choi Jae-Hee |
| 分类号 |
H01L23/373;H01L29/36;H01L23/367;H01L29/10;H01L27/088 |
主分类号 |
H01L23/373 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device comprising:
a first fin pattern comprises a first lower pattern and a first upper pattern stacked sequentially on a substrate, the first upper pattern comprising a first part and second parts respectively disposed on sides of the first part; a gate electrode formed on the first part to intersect the first fin pattern; and source/drain regions formed on the second parts, respectively, wherein a dopant concentration of the first upper pattern is greater than a dopant concentration of the first lower pattern and a dopant concentration of the substrate, and the dopant concentration of the first lower pattern is different from the dopant concentration of the substrate. |
| 地址 |
Seongnam-si KR |
