| 摘要 |
A flash memory having a V-shaped stack gate structure. The V-shaped stack gate is formed by implanting ions into a substrate to form a buried source line using a mask, and then forming a V-shaped trench that exposes the buried source line in the substrate. A V-shaped word line stack gate is next formed over the trench and the substrate next to the trench. A common drain terminal is formed in the substrate on each side of the V-shaped stack gate. The drain terminal is electrically connected to a bit line by forming a contact plug.
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