| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a quantum dot optical semiconductor element of which process is simple and convenient without degrading crystal quality. SOLUTION: The method of manufacturing a quantum dot optical semiconductor element includes a first step to self-form a quantum dot 3 containing V-group elements, a second step to bury the quantum dot 3 in a barrier layer 4 which has different composition from the quantum dot 3 and contains V-group elements, a third step wherein the barrier layer 4 and the quantum dot 3 are partly subject to vapor-phase etching while making such an atmosphere containing V-group elements that constitute the quantum dot 3 at least at the completion of vapor phase etching. The first to third steps are repeated plural times to form a composite quantum dot 5 comprised of a plurality of laminated quantum dots. COPYRIGHT: (C)2008,JPO&INPIT
|
