Semiconductor device manufacturing method

摘要

A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm2 or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.

主权项

1. A semiconductor device manufacturing method, the method comprising:
accommodating a semiconductor substrate in a processing chamber of a plasma processing apparatus, wherein the semiconductor substrate includes: an insulation layer having a protruding shape and having a surface that conforms to a surface of the semiconductor substrate and a rising surface that protrudes upward while perpendicular to the surface of the insulation layer; and a conductive layer to cover the insulation layer having the protruding shape; and patterning in the processing chamber a predetermined region of the conductive layer according to an etching process so as to remove the predetermined region and expose the insulation layer having the protruding shape, wherein the etching process is performed by microwave plasma while applying bias power of 70 mW/cm2 or above to the semiconductor substrate under a high pressure condition of 85 mTorr or above, and a ratio of etching rate of the conductive layer to etching rate of the insulation layer is 50 or higher in the etching process.