SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE

摘要

A semiconductor element includes a first electrode having at least one convex feature, a second electrode having a concave feature opposed to the convex feature, and a variable resistance layer including an element whose absolute value of standard reaction Gibbs energy for forming oxide is larger than the corresponding value of an element included in the first electrode, and being disposed between the convex feature and the concave feature or on the outer circumference of the convex feature of the first electrode.

主权项

1. A semiconductor element, comprising:
a first electrode including at least one convex feature; a second electrode including a concave feature opposed to the convex feature; a variable resistance layer including an element whose absolute value of standard reaction Gibbs energy for forming an oxide is larger than the corresponding absolute value of standard reaction Gibbs energy for forming an oxide by an element included in the first electrode, wherein the variable resistance layer is disposed between the convex feature and the concave feature; and an insulator between the second electrode and the variable resistance layer, wherein the absolute value of standard reaction Gibbs energy required by an element included in the insulator for forming an oxide is larger than the absolute value of standard reaction Gibbs energy for forming an oxide required by the element included in the variable resistance layer.