发明名称 |
HIGH ANNEALING TEMPERATURE PERPENDICULAR MAGNETIC ANISOTROPY STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY |
摘要 |
A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure comprises a first high perpendicular Magnetic Anisotropy (PMA) multilayer and a second high PMA layer separated by a thin Ruthenium layer. Each PMA layer is comprised of a first cobalt layer and a second cobalt layer separated by a nickel/cobalt multilayer. After each of the first and second PMA layers and the Ruthenium exchange coupling layer are deposited, the resulting structure goes through a high temperature annealing step, which results in each of the first and second PMA layers having a perpendicular magnetic anisotropy. |
申请公布号 |
WO2016171920(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
WO2016US26473 |
申请日期 |
2016.04.07 |
申请人 |
SPIN TRANSFER TECHNOLOGIES, INC. |
发明人 |
KARDASZ, Bartlomiej Adam;PINARBASI, Mustafa Michael;HERNANDEZ, Jacob Anthony |
分类号 |
H01L43/02;H01L43/10;H01L43/12 |
主分类号 |
H01L43/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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