| 摘要 |
<p>PURPOSE: To provide a thin-film transistor with a three-dimensional multi-channel structure for improving the channel conductance and the current-driving capacity of a polycrystalline silicon thin film transistor. CONSTITUTION: A semiconductor layer 44 in a state of ohmic contact with a source electrode and a drain electrode 45 is formed between the electrodes. The semiconductor layer is constituted of a number of sub semiconductor layers comprising a number of silicon strips. In a number of sub semiconductor layers, each gate insulation film surrounds a front surface. Further, a gate 41 surrounds the outside of the gate insulation film, so that the entire surface layer of each sub semiconductor layer surrounded by the gate electrode is provided at a channel region 43.</p> |
