| 摘要 |
PURPOSE: To provide a semiconductor integrated circuit structure which is high in reliability, wherein a silicide junction located below a window is protected against damage caused by overetching when the window is formed. CONSTITUTION: A semiconductor integrated circuit is composed of a substrate 111, two transistor gates 25 which are formed on the substrate 111 and where a current path is formed between them, and a dielectric body 138 formed on the substrate 111, wherein the dielectric body 138 is equipped with a window 100 where a part 137 of the substrate 111 is exposed, the part 137 is arranged adjacent to a current path, and the window 100 is filled up with conductive material. |
