| 发明名称 |
FERROELECTRIC FILM, FERROELECTRIC MOMORY, PIEZOELECTRIC ELEMENT, SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING FERROELECTRIC FILM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric film suitable for a ferroelectric capacitor with hysteresis characteristics which allows the film to be used in any of 1T1C, 2T2C and simple matrix ferroelectric memories. <P>SOLUTION: The ferroelectric film 101 is composed of an oxide represented by a general formula of AB<SB>1-x</SB>Nb<SB>x</SB>O<SB>3</SB>wherein the element A comprises at least Pb, and the element B comprises at least one of Zr, Ti, V, W and Hf, and the oxide contains Nb in an amount of 0.05≤x<1. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006188427(A) |
申请公布日期 |
2006.07.20 |
| 申请号 |
JP20060007342 |
申请日期 |
2006.01.16 |
| 申请人 |
SEIKO EPSON CORP |
发明人 |
KIJIMA TAKESHI;HAMADA YASUAKI;NATORI EIJI |
| 分类号 |
C04B35/49;B05C5/00;B41J2/045;B41J2/055;B41J2/16;C01G25/02;C01G33/00;C04B35/491;H01B3/00;H01B3/12;H01B17/62;H01L21/8246;H01L27/10;H01L27/105;H01L41/08;H01L41/09;H01L41/187;H01L41/318;H01L41/39;H02N2/00 |
主分类号 |
C04B35/49 |
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