| 摘要 |
PROBLEM TO BE SOLVED: To produce a silicon wafer and a silicon single crystal which have not a grown-in defect. SOLUTION: The silicon wafer and the silicon single crystal are produced by using a czochralski(CZ) furnace where an axial temperature gradient in a high temperature part approximate to the melting point of silicon becomes smaller than that in the central part of a crystal. Crystal growth is conducted under a condition that the central part of the crystal becomes a defect-free zone, an oxidation inducement stacking defect-formed zone or an infrared scattering defect-formed zone. When assigning G' for the axial temperature gradient in the high temperature part approximate to the melting point of silicon and assigning V for a pulling speed, the pulling speed V is adjusted so as for the value of V/G' to be constant regarding the change in the axial temperature gradient G' accompanied by the progress of crystal growth. The desired value of V/G' is retained without changing the average pulling speed V. |
