SEMICONDUCTOR DEVICE WIRING AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A semiconductor device wiring and a method for forming the same are provided to form a reliable contact wiring by reducing a loss of an isolation area in a bordless contact. CONSTITUTION: A trench isolation layer(32) is formed on an isolation layer of a semiconductor substrate(31). A gate insulation layer(33) and a gate electrode(34) are deposited on the active area of the semiconductor substrate. Impurity area is formed on the semiconductor substrate positioned both sides of the gate electrode. The first to fourth insulation layers are formed on the semiconductor substrate including the gate electrode. A contact window includes the first width part, and is formed with a narrower width as compared to the first width at the same depth inside of the fourth insulation layer of the impurity area. A barrier metal layer(43) is formed along the contact window surface. A contact wiring layer is formed in the contact window of the barrier metal layer.