发明名称 |
SUSCEPTORLESS REACTOR FOR GROWING EPITAXIAL LAYERS ON WAFERS BY CHEMICAL VAPOR DEPOSITION |
摘要 |
<p>The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier (110) is transported between a loading position (L) and a deposition position (D). In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle (120) without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time. The invention also describes several embodiments and variants of the invention. One of the variants of the invention provides a decrease in a heat drain from the wafer-supporting assembly through the spindle (500) and a novel heating arrangement therefor. The advantages of the invention include lower reactor cycle, the lower cost and longer lifetime of the component parts, and better temperature control, among others.</p> |
申请公布号 |
WO02063074(A1) |
申请公布日期 |
2002.08.15 |
申请号 |
WO2001US26067 |
申请日期 |
2001.08.21 |
申请人 |
EMCORE CORPORATION |
发明人 |
BOGUSLAVSKIY, VADIM;GURARY, ALEXANDER |
分类号 |
C30B15/12;C23C16/44;C23C16/458;C23C16/46;C30B25/12;H01L21/205;H01L21/687;(IPC1-7):C30B25/02;C30B25/08;C30B25/14 |
主分类号 |
C30B15/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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