| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for forming a micro tunnel oxide film without degrading efficiency in manufacturing a nonvolatile semiconductor memory. SOLUTION: The nonvolatile semiconductor memory comprises a silicon substrate 2, a gate oxide film 5 formed on the silicon substrate, a floating gate electrode with the gate oxide film in-between, and a tunnel oxide film through which electrons pass for writing/erasing electrons to the floating gate electrode formed at a part of the gate oxide film. The manufacturing method of it includes a process for forming an oxide film 12 on the silicon substrate, a process for forming a resist mask 11 on the oxide film which is provided with an opening inside a tunnel oxide film formation region, a process for etching an oxide film exposed in the opening down to a specified residual film thickness by anisotropic dry etching with the resist mask as a mask, and a process for forming a tunnel window 15 by exposing the silicon substrate in the tunnel oxide film formation region by wet etching with the resist mask as it is. COPYRIGHT: (C)2006,JPO&NCIPI
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