A METHOD IN THE FABRICATION OF A FERROELECTRIC MEMORY DEVICE
摘要
<p>In a method in the fabrication of a ferroelectric memory device comprising a memory layer sandwiched between first and second electrode sets, the memory layer as well as both electrode sets are each realized in the memory device by a suitable printing process.</p>
申请公布号
WO2006135246(A1)
申请公布日期
2006.12.21
申请号
WO2006NO00215
申请日期
2006.06.08
申请人
THIN FILM ELECTRONICS ASA;DYREKLEV, PETER;LEISTAD, GEIRR, I.;GUSTAFSSON, GOERAN
