发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP AND METHOD FOR PROCESSING SEMICONDUCTOR WAFER |
摘要 |
<p>In a laser processing step S3, boundary sections among semiconductor elements 2 of a resist film 4 are exposed to a laser beam 13a, to thus form in the resist film 4 boundary grooves 5-which partition the semiconductor elements 2 from each other-and to uncover a surface 1b of a semiconductor wafer 1 in the boundary grooves 5. In a plasma etching step S6, the surface 1b of the semiconductor wafer 1 exposed in the boundary grooves 5 is etched by means of plasma Pf of a fluorine-based gas, to thus separate the semiconductor wafer 1 into individual semiconductor chips 1' along the boundary grooves 5. Between the laser processing step S3 and the plasma etching step S6, there is performed processing pertaining to a boundary-groove-surface smoothing step S5 for smoothing, by means of plasma Po of oxygen gas, surfaces of the boundary grooves 5 having assumed an irregular shape in the laser processing step S3.</p> |
申请公布号 |
WO2008023849(A1) |
申请公布日期 |
2008.02.28 |
申请号 |
WO2007JP66960 |
申请日期 |
2007.08.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;HAJI, HIROSHI;ARITA, KIYOSHI |
发明人 |
HAJI, HIROSHI;ARITA, KIYOSHI |
分类号 |
H01L21/78;H01L21/308 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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