| 发明名称 |
Semiconductor memory device |
| 摘要 |
A semiconductor memory device is constructed to include a memory cell formed by a plurality of transistors, wherein each of gate wiring layers of all of the transistors forming the memory cell is arranged to extend in one direction.
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| 申请公布号 |
US2008315259(A1) |
申请公布日期 |
2008.12.25 |
| 申请号 |
US20080078739 |
申请日期 |
2008.04.04 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
YANAI TSUYOSHI;KAJII YOSHIO;OHKAWA TAKASHI |
| 分类号 |
H01L29/00;H01L21/8244;H01L27/11 |
主分类号 |
H01L29/00 |
| 代理机构 |
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