| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-purity molybdenum oxide thin film in which impurities other than molybdenum (Mo) and oxygen (O) are not contained substantially and to provide a method for producing the high-purity molybdenum oxide thin film. SOLUTION: The high-purity molybdenum oxide thin film has≥2.5 eV band gap and 3:1 atomic ratio of molybdenum (Mo):oxygen (O) and does not contain impurities substantially. The method for producing the high-purity molybdenum oxide thin film comprises a step of immersing a base material in a reaction solution containing a molybdenum fluoride complex to precipitate molybdenum oxide on the surface of the base material. COPYRIGHT: (C)2009,JPO&INPIT
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