| 摘要 |
PURPOSE: A method for manufacturing a plug line of a semiconductor device is provided to prevent the spreading effect of a doped phosphorous upon a source/drain region. CONSTITUTION: A method for manufacturing a plug line of a semiconductor device comprises the following steps. Wafer having a contact hole for forming a plug line is loaded on a wafer loading plate(70) within a chamber(100). Gas is exhausted from the chamber to the outside and an inner pressure of the chamber(100) is lowered. A hydrogen plasma generator(90) of the chamber(100) generates a hydrogen plasma and the remaining oxygen of the wafer is exhausted by the hydrogen reduction reaction. Amorphous silicon is deposited within the contact hole formed on the insulating layer of the wafer and a plug line is formed. The resultant is unloaded and a thermal annealing process for the plug line is performed.
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