| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor single crystal production method by which a large-diameter compound semiconductor single crystal such as GaAs single crystal can easily be produced and also, when such a single crystal is worked, the yield of the worked product can be improved without causing any crack, slip or the like. SOLUTION: This production method comprises a growth step for supplying a prescribed raw material to a growth section controlled so as to be maintained under prescribed conditions, to grow a compound semiconductor single crystal having a prescribed outer diameter, and a strain removal step for heating the grown compound semiconductor signal crystal having the prescribed out diameter to a prescribed heat treatment (annealing) temperature, to remove strain inside the single crystal.
|
