Content addressable memory (CAM) cell bit line architecture

摘要

A ternary content addressable memory (TCAM) cell ( 100 ) can include two memory elements ( 102 - 0 and 102 - 1 ) with a single bit line ( 106 - 0 and 106 - 1 ) per memory element. A TCAM cell ( 100 ) can also include a compare stack ( 104 ) and two word lines ( 114 and 116 ) that can connect to each memory element ( 102 - 0 and 102 - 1 ). The memory elements ( 102 - 0 and 102 - 1 ) can include SRAM type memory cells with one of two data terminals connected to a pre-write potential (Vpre, which can be a ground potential, or the like). Write operations can include pre-setting the data values of memory elements ( 102 - 0 and 102 - 1 ) to the pre-write potential prior to providing write data via the bit lines ( 106 - 0 and 106 - 1 ).