发明名称 FLASH MEMORY WITH OPTIMIZED WRITE SECTOR SPARES
摘要 In certain exemplary embodiments, a memory device with optimized write sectors has a plurality P of memory write sectors and N memory spare sectors Cumulatively, the memory write sectors correspond to the specified storage capacity of the memory. The number N of spares is approximately equal to the number of write sectors expected to be decommissioned within an operational lifetime of the memory, which can be determined by empirical measurement. A method, by way of non-limiting example, of making memory includes specifying a plurality P of write sectors which define a specified storage capacity of a memory device, determining a number N of spare sectors, and making a memory device with about P write sectors and about N spare sectors. The number N can be determined, by way of example, by summing the infant mortality with the random failure of write sectors. One exemplary tool to determine infant mortality and random failure is to empirically create a cycle-based bathtub curve having infant mortality, random failure, and wear out regions.
申请公布号 US2009154242(A1) 申请公布日期 2009.06.18
申请号 US20070958425 申请日期 2007.12.18
申请人 JANAI MEIR 发明人 JANAI MEIR
分类号 G11C16/06 主分类号 G11C16/06
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