发明名称 |
MANUFACTURING METHOD AND APPARATUS OF LOW TEMPERATURE POLYCRYSTALLINE SILICON, AND POLYCRYSTALLINE SILICON |
摘要 |
A manufacturing method and apparatus of low temperature polycrystalline silicon, and a polycrystalline silicon are provided. The manufacturing method of low temperature polycrystalline silicon includes forming an amorphous silicon layer on a substrate; scanning the amorphous silicon layer by using a laser to emit a strip-shaped laser beam to go through a mask which includes transmissive stripes and partially-transmissive stripes arranged alternately, to form low temperature fusion regions and high temperature fusion regions which are arranged alternately on the amorphous silicon layer; recrystallizing the amorphous silicon layer from the low temperature fusion regions to the high temperature fusion regions. |
申请公布号 |
US2016336358(A1) |
申请公布日期 |
2016.11.17 |
申请号 |
US201615088296 |
申请日期 |
2016.04.01 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Min Jian |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method of low temperature polycrystalline silicon, comprising:
forming an amorphous silicon layer on a substrate; scanning the amorphous silicon layer by using a laser to emit a strip-shaped laser beam to go through a mask which includes transmissive stripes and partially-transmissive stripes arranged alternately, to form low temperature fusion regions and high temperature fusion regions which are arranged alternately on the amorphous silicon layer; and recrystallizing the amorphous silicon layer from the low temperature fusion regions to the high temperature fusion regions. |
地址 |
Beijing CN |