发明名称 Apparatus and method to control ion beam current
摘要 An apparatus to control an ion beam for treating a substrate. The apparatus may include a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam, a ground electrode assembly disposed downstream of the fixed electrode. The ground electrode assembly may include a base and a ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position.
申请公布号 US9396903(B1) 申请公布日期 2016.07.19
申请号 US201514615602 申请日期 2015.02.06
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Chang Shengwu;Rounds Kristen S.;Leavitt William;St. Peter Michael
分类号 C23C14/48;G21K1/08;H01J37/317;H01J37/08;H01J37/10 主分类号 C23C14/48
代理机构 代理人
主权项 1. An apparatus to control an ion beam for treating a substrate, comprising: a fixed electrode configured to conduct the ion beam through a fixed electrode aperture and to apply a fixed electrode potential to the ion beam; a ground electrode assembly disposed downstream of the fixed electrode, the ground electrode assembly comprising: a base; and a ground electrode disposed adjacent the fixed electrode and configured to conduct the ion beam through a ground electrode aperture, the ground electrode being reversibly movable along a first axis with respect to the fixed electrode between a first position and a second position, wherein a beam current of the ion beam at the substrate varies when the ground electrode moves between the first position and second position.
地址 Gloucester MA US