| 摘要 |
A power device and a thermal sensitive device are arranged on an equal semiconductor substrate. The thermal sensitive device connects one side of a PN junction to one of a ground voltage (VSS) or a power source voltage (VDD) through a resistor, and uses a sum of a voltage difference between both ends of the PN junction and a voltage difference between both ends of the resistor as a temperature detection signal. By the same, latch-up is avoided, and it is possible to arrange a thermal sensor at a concave part installed in the power device. On the semiconductor substrate, the semiconductor device can have a small temperature difference between a spot where the power device is located and a spot where the thermal sensitive device is located. |
