TWO-STEP PROJECTING BUMP FOR SEMICONDUCTOR CHIP AND METHOD FOR FORMING THE SAME

摘要

In a two-staged projecting bump formed on an electrode (4) of a semiconductor element (8) in a method of melting a leading end of a metallic wire (1) passed through a capillary (3) thereby forming a metallic ball (2); bonding the metallic ball to the electrode of the semiconductor element; moving the capillary sideways and downward; bonding the metallic wire onto the metallic ball bonded to the electrode of the metallic wire; and pulling and breaking the metallic wire, wherein a metallic wire part (B) immediately above the metallic ball where crystal grains are thermally influenced and turned coarse when the leading end of the metallic wire is melted thereby forming the metallic ball is located inside a boundary where the bonding between the metallic ball and the metallic wire terminates. <IMAGE>