ELECTROSTATIC DISCHARGE PROTECTION DEVICES AND METHODS FOR PROTECTING SEMICONDUCTOR DEVICES AGAINST ELECTROSTATIC DISCHARGE EVENTS

摘要

Methods and devices are provided for protecting semiconductor devices against electrostatic discharge events. An electrostatic discharge protection device comprises a silicon substrate, a P⁺-type anode region disposed within the silicon substrate, and an N-well device region disposed within the silicon substrate in series with the P⁺-type anode region. A first P-well device region is disposed within the silicon substrate in series with the first N-well device region and an N⁺-type cathode region is disposed within the silicon substrate. A gate electrode is disposed at least substantially overlying the first N-well and P-well device regions of the silicon substrate.