发明名称 CHARGE PUMP CIRCUIT
摘要 A charge pump circuit includes a sub circuit which is a pumping stage circuit or an output stage circuit. The sub circuit includes an input terminal, an output terminal, a transistor, a first capacitive device, a first diode device, and a second diode device. A transistor has a first source/drain (S/D) terminal combined with the input terminal, a second S/D terminal combined with the output terminal, and a gate terminal. The first capacitive device has a first end part combined with the gate terminal of the transistor and a second end part for receiving a first driving signal. The first diode device has a cathode combined with the second S/D terminal of the transistor and an anode combined with the gate terminal of the transistor. The second diode device has a cathode combined with the gate terminal of the transistor and an anode combined with the second S/D terminal of the transistor. So, various voltage levels between a reference ground voltage and an input supply voltage can be obtained.
申请公布号 KR20160067804(A) 申请公布日期 2016.06.14
申请号 KR20150172447 申请日期 2015.12.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 ROTH ALAN;SOENEN ERIC
分类号 H02M3/07 主分类号 H02M3/07
代理机构 代理人
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