METHODS OF FORMING PATTERNS WITH BLOCK COPOLYMER

摘要

A method of forming patterns includes forming a guide pattern and first peripheral patterns on an underlying layer. The guide pattern provides first openings and the first peripheral patterns provide a fifth opening used in alignment of the guide pattern. An alignment status of the guide pattern is verified using the fifth opening. A block copolymer layer is formed to fill the first and fifth openings. The block copolymer layer is annealed to provide a blocking portion sealing the fifth opening and to form first domains in each first opening and a second domain surrounding the first domains formed in each first opening. The first domains are removed to form third openings. The underlying layer is etched using the blocking portion and sidewalls of the second domains as etch barriers to form fourth openings that extend from the third openings to penetrate the underlying layer.

主权项

1. A method of forming patterns, the method comprising:
forming a guide pattern and first peripheral patterns over an underlying layer, the guide pattern defining first openings, the first peripheral patterns defining second openings; forming a block copolymer layer filling the first and second openings; annealing the block copolymer layer to provide blocking portions in the second openings and to form at least one first domain and a second domain in each of the first openings, wherein the second domain surrounds the first domain; selectively removing the first domain to form a third opening; and etching the underlying layer using the blocking portions and the second domain as etch barrier to form a fourth opening that extends from the third opening into the underlying layer.